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NDS9410A
April 2000
NDS9410A
Single N-Channel Enhancement Mode Field Effect Transistor
General Description
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss and resistance to transients are needed.
Features
* 7.3 A, 30 V. RDS(ON) = 28 m @ VGS = 10 V RDS(ON) = 42 m @ VGS = 4.5 V
* High performance trench technology for extremely low RDS(ON) * High power and current handling capability in a widely used surface mount package.
D D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA=25 C unless otherwise noted
o
Parameter
Ratings
30 20
(Note 1a)
Units
V V A W
7.3 20 2.5 1.2 1.0 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 25
C/W C/W
Package Marking and Ordering Information
Device Marking NDS9410A Device NDS9410A Reel Size 13'' Tape width 12mm Quantity 2500 units
2000 Fairchild Semiconductor Corporation
NDS9410A Rev B(W)
NDS9410A
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V VDS = 0 V VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, VGS = 10 V, VGS = 4.5 V, VGS = 4.5 V, VGS = 10 V, VDS = 15 V, ID = 7.3 A ID = 7.3 A, TJ=125C ID = 6.3 A ID = 6.3 A, TJ=125C VDS = 5 V ID = 7.3 A
Min
30
Typ
Max Units
V
Off Characteristics
28 2 100 -100 mV/C A nA nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance
1
1.6 -4.3 19 30 25 42
3
V mV/C
28 45 42 75
m
ID(on) gFS
On-State Drain Current Forward Transconductance
20 22
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 15 V, V GS = 0 V, f = 1.0 MHz
830 185 80
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 25 V, ID = 1 A, VGS = 10 V, RGEN = 6
6 10 18 5
12 20 32 10 22
ns ns ns ns nC nC nC
VDS = 15 V, ID = 2 A, VGS = 10 V
14 2.7 3.0
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 2.2 A Voltage 2.2
(Note 2)
A V
0.78
1.1
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 50/W when 2 mounted on a 1in pad of 2 oz copper
b) 105/W when 2 mounted on a .04 in pad of 2 oz copper
c) 125/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
NDS9410A Rev B(W)
NDS9410A
Typical Characteristics
30 VGS = 10V 25 20 15 10 6.0V 5.0V 4.5V 3.0V 4.0V 3.5V
2.5 VGS = 3.0V 2
3.5V 1.5 4.0V 4.5V 1 5.0V 6.0V 10V 2.5V 0.5
5 0 0 0.5 1
1.5
2
2.5
0
5
10
15
20
25
30
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.1
1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100
o
ID = 7.3A VGS = 10V
ID = 7.3 A 0.08
0.06
o
0.04
o
TA = 125 C
0.02
TA = 25 C
0 125 150 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
30 VDS = 5V 25 125 C 20 15 10 5 0 0.5 1.5 2.5 3.5 4.5
o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
TA = -55 C
o
25 C
o
VGS = 0V 10 1 0.1 -55 C 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4
o
TA = 125 C 25
o
o
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
NDS9410A Rev B(W)
NDS9410A
Typical Characteristics
10 ID = 7.3A 8 VDS = 5V 10V 15V
1500 f = 1MHz VGS = 0 V 1200 CISS
6
900
4
600 COSS CRSS
2
300
0 0 3 6 9 12 15
0 0 5 10 15 20 25 30
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 RDS(ON) LIMIT 10 1ms 10ms 100ms 1s 10s DC VGS = 10V SINGLE PULSE 0.01 RJA = 125 C/W TA = 25 C 0.001 0.1 1 10 100 0
o o
Figure 8. Capacitance Characteristics.
50
100s 40
SINGLE PULSE RJA = 125 C/W TA = 25 C 30
o o
1
0.1
20
10
0.001
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE RJA(t) = r(t) + RJA RJA = 125 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.1 t1, TIME (sec) 1 10 100 1000
0.1
0.001 0.0001 0.001 0.01
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
NDS9410A Rev B(W)
SO-8 Tape and Reel Data and Package Dimensions
SOIC(8lds) Packaging Configuration: Figure 1.0
Packaging Description:
EL ECT ROST AT IC SEN SIT IVE DEVICES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S
TNR D ATE PT NUMB ER PEEL STREN GTH MIN ___ __ ____ __ ___gms MAX ___ ___ ___ ___ _ gms
Antistatic Cover Tape
ESD Label
SOIC-8 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2,500 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or 177cm diameter reel. This and some other options are further described in the Packaging Information table. These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped.
Static Dissipative Embossed Carrier Tape
F63TNR Label Customized Label
F852 NDS 9959 F852 NDS 9959 F852 NDS 9959 F852 NDS 9959
SOIC (8lds) Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments Standard (no flow code) TNR 2,500 13" Dia 343x64x343 5,000 0.0774 0.6060 L86Z Rail/Tube 95 530x130x83 30,000 0.0774 F011 TNR 4,000 13" Dia 343x64x343 8,000 0.0774 0.9696 D84Z TNR 500 7" Dia 184x187x47 1,000 0.0774 0.1182
F852 NDS 9959
Pin 1
SOIC-8 Unit Orientation
343mm x 342mm x 64mm Standard Intermediate box ESD Label F63TNR Label sample
LOT: CBVK741B019 FSID: FDS9953A QTY: 2500 SPEC:
F63TNLabel F63TN Label ESD Label
(F63TNR)3
D/C1: D9842 D/C2:
QTY1: QTY2:
SPEC REV: CPN: N/F: F
SOIC(8lds) Tape Leader and Trailer Configuration: Figure 2.0
Carrier Tape Cover Tape
Components Trailer Tape 640mm minimum or 80 empty pockets Leader Tape 1680mm minimum or 210 empty pockets
July 1999, Rev. B
SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC(8lds) Embossed Carrier Tape Configuration: Figure 3.0
T E1
P0
D0
F K0 Wc B0 E2 W
Tc A0 P1 D1
User Direction of Feed
Dimensions are in millimeter Pkg type SOIC(8lds) (12mm)
A0
6.50 +/-0.10
B0
5.30 +/-0.10
W
12.0 +/-0.3
D0
1.55 +/-0.05
D1
1.60 +/-0.10
E1
1.75 +/-0.10
E2
10.25 min
F
5.50 +/-0.05
P1
8.0 +/-0.1
P0
4.0 +/-0.1
K0
2.1 +/-0.10
T
0.450 +/0.150
Wc
9.2 +/-0.3
Tc
0.06 +/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum Typical component cavity center line
0.5mm maximum
B0 20 deg maximum component rotation
0.5mm maximum
Sketch A (Side or Front Sectional View)
Component Rotation
A0 Sketch B (Top View)
Typical component center line
Sketch C (Top View)
Component lateral movement
SOIC(8lds) Reel Configuration: Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A Max
Dim A max
Dim N
See detail AA
7" Diameter Option
B Min Dim C See detail AA W3
Dim D min
13" Diameter Option
W2 max Measured at Hub DETAIL AA
Dimensions are in inches and millimeters
Tape Size
12mm
Reel Option
7" Dia
Dim A
7.00 177.8 13.00 330
Dim B
0.059 1.5 0.059 1.5
Dim C
512 +0.020/-0.008 13 +0.5/-0.2 512 +0.020/-0.008 13 +0.5/-0.2
Dim D
0.795 20.2 0.795 20.2
Dim N
2.165 55 7.00 178
Dim W1
0.488 +0.078/-0.000 12.4 +2/0 0.488 +0.078/-0.000 12.4 +2/0
Dim W2
0.724 18.4 0.724 18.4
Dim W3 (LSL-USL)
0.469 - 0.606 11.9 - 15.4 0.469 - 0.606 11.9 - 15.4
12mm
13" Dia
(c) 1998 Fairchild Semiconductor Corporation
July 1999, Rev. B
SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC-8 (FS PKG Code S1)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in: inches [millimeters]
Part Weight per unit (gram): 0.0774
9
September 1998, Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST FASTrTM GTOTM
DISCLAIMER
HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM
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LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. E

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